Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-10-31
1998-03-17
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257197, 437984, H01L 29737, H01L 2941
Patent
active
057290334
ABSTRACT:
A submicron emitter heterojunction bipolar transistor and a method for fabricating the same is disclosed. The fabrication process includes lattice matched growth of subcollector, collector, base, emitter, and emitter cap layers in sequential order on a semi-insulating semiconductor substrate. An emitter cap mesa, an emitter/base/collector mesa and a subcollector mesa are formed. Dielectric platforms are formed extending the base/collector layers laterally. Sidewalls are formed on the sides of emitter cap mesa and the sides of the extended base/collector layers and undercuts are etched into the emitter layer and the upper portion of the subcollector layer. This forms an overhang on the emitter cap mesa with respect to the emitter layer and an overhang on the base/collector layers with respect to the upper portion of the subcollector layer. Emitter, base and collector contacts are simultaneously formed, the base contact aligned to the edge of the emitter cap overhang and the collector contact aligned to the edge of the base/collector layer overhang.
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Denson-Low W. K.
Duraiswamy V. D.
Guay John
Hughes Electronics
Jackson Jerome
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