Fully overlapped nitride-etch defined device and processing sequ

Details Fully overlapped nitride-etch defined device and processing sequ Fully overlapped nitride-etch defined device and processing sequ

1997-12-04

2000-06-06

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438735, H01L 2100

Patent

active

060718250

ABSTRACT:
The present invention relates to methods for fabricating Fully Overlapped Nitride-Etch Defined (Fond) devices. These methods permit the lateral dimension and depth of the lowly-doped source and drain extensions to be independently controlled and well defined.

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