Oscillators – Solid state active element oscillator – Transistors
Patent
1998-02-12
1999-10-26
Mis, David
Oscillators
Solid state active element oscillator
Transistors
331 34, 331 36C, 331 96, 331117D, 331177R, 331177V, H03B 512
Patent
active
059735759
ABSTRACT:
A voltage controlled oscillator for wide tuning range of frequency with less phase noise has a bipolar transistor provided with a positive feedback circuit between a base and an emitter of the transistor, an impedance matching circuit coupled with a collector of the transistor and an output terminal, a resistor coupled between the base of the transistor and a control source which provides control voltage for adjusting oscillation frequency of the oscillator. The base of the transistor shows capacitive negative impedance, and an inductive element is coupled with the base of the transistor for oscillation. The emitter of the transistor is grounded for D.C. voltage through an inductor or a transmission line, or coupled with a control voltage.
REFERENCES:
patent: 5075643 (1991-12-01), Einbinder
patent: 5144264 (1992-09-01), Chong et al.
patent: 5347238 (1994-09-01), Kobayashi
patent: 5565821 (1996-10-01), Murtojarvi
I.D. Robertson, "MMIC Design" The Institution of Electrical Engineers, London, UK, p. 364, 1995, ISBN 0-85296-816-7.
Kamogawa et al., "A Very Wide-Tuning Range 5-GHz-Band Si bipolar VCO Using Three-Dimensional MMIC Technology", The Institute of Electronics, Information and Communication in Japan, General Meeting Report, C-2-39, p. 94, Osaka, Japan, Mar. 24-27, 1997.
"Varactorless VCO's: Transistors go it Alone", O'Clock Jr., Microwaves and RF, vol. 23, No. 6, Jun. 1984, pp. 137-142.
Patent Abstracts of Japan, vol. 018, No. 447 (E-1594), Aug. 19, 1994 and JP 06 140836 A.
"MMIC 14-GHz VCO and Miller Frequency Divider for Low-Noise Local Oscillators", Ohira et al, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-35, No. 7, Jul. 1987, pp. 657-662.
"A Novel Heterojunction Bipolar Transistor VCO Using an Active Tunable Inductance", Kobayashi et al, IEEE Microwave and Guided Wave Letters, vol. 4, No. 7, Jul. 1994, pp. 235-237.
"0.5-.mu.m Bipolar Technology Using a New Base Formation Method: SST1C", Yamaguchi et al, IEEE 1993 Bipolar Circuits and Technology Meeting 4.2, pp. 63-66.
"A Very Wide-Tuning Range 5-GHz-band Si Bipolar VCO Using Three-Dimensional MMIC Technology", Kamogawa et al, IEEE MTT-S Digest, 1997, pp. 1221-1224.
"Wide Tuning Range Si Bipolar VCO's Based on Three-Dimensional MMIC Technology", Kamogawa et al, IEEE Transactions on Microwave Theory and Techniques, vol. 45, No. 12, Dec. 1997, pp. 1-8.
Kamogawa Kenji
Nishikawa Kenjiro
Tokumitsu Tsuneo
Toyoda Ichihiko
Mis David
Nippon Telegraph and Telephone Corp.
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