Fully integrated reference circuit having controlled temperature

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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327538, G05F 110

Patent

active

060912863

ABSTRACT:
Mobility in an FET is used as a time standard to develop a resistance (or a transconductance or a current) reference which may be fully integrated and which is temperature stable to an arbitrary desired accuracy (or which varies with temperature in a desired fashion). The large temperature dependence of mobility is compensated (or adjusted to a desired variation characteristic) by applying a gate bias voltage having a predetermined variation in value with respect to temperature. In one embodiment the bias voltage of the FET is given a temperature dependence which results in the drain current of the FET being substantially constant with respect to temperature. This current is then used to charge or discharge a capacitor, yielding a precise R-C product which may be implemented fully in integrated form.

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patent: 5235218 (1993-08-01), Matsuo et al.
patent: 5304862 (1994-04-01), Memida

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