Fully-depleted-collector silicon-on-insulator (SOI) bipolar...

Details Fully-depleted-collector silicon-on-insulator (SOI) bipolar... Fully-depleted-collector silicon-on-insulator (SOI) bipolar...

2005-02-01

2005-02-01

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With metal contact alloyed to elemental semiconductor type...

In bipolar transistor structure

C257S197000, C257S205000, C257S273000, C257S361000, C257S370000, C257S378000, C257S477000

Reexamination Certificate

active

06849871

ABSTRACT:
A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical bipolar transistors on semiconductor material having a thickness of 300 nm or less and to permit the fabrication of SOI BiCMOS. The invention overcomes the problem of requiring a thick semiconductor layer in SOI to fabricate vertical bipolar transistors with low collector resistance.

REFERENCES:
patent: 5506427 (1996-04-01), Imai
patent: 5587599 (1996-12-01), Mahnkopf et al.
Y. Taur and T.H. Ning, Fundamentals of Modern VLSI Devices, Chapter 6, Bipolar Devices, Cambridge University Press, 1998, pp. 292-347.
T. Hiramoto et al., IEDM Tech. Digest, pp. 39-42, 1992.
K. Washio et al., IEDM, p. 741, 2000.

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