Full-swing wordline driving circuit

Details Full-swing wordline driving circuit Full-swing wordline driving circuit

2006-04-04

2006-04-04

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S198000

Reexamination Certificate

active

07023738

ABSTRACT:
A circuit is proposed for driving a memory line controlling at least one memory cell of a non-volatile memory device, the circuit being responsive to a first and a second selection signals, each one suitable to assume a first logic value or a second logic value, wherein the circuit includes a first level shifter for converting the first selection signal into a first operative signal and a second level shifter for converting the second selection signal into a second operative signal, each level shifter including first shifting means for shifting one of the logic values of the corresponding selection signal to a first bias voltage, and a selector for applying the first operative signal or a second bias voltage to the memory line according to the second operative signal; in the circuit of the invention each level shifter further includes second shifting means for shifting another of the logic values of the corresponding selection signal to the second bias voltage.

REFERENCES:
patent: 5959890 (1999-09-01), Yamamoto et al.
patent: 6021083 (2000-02-01), Shiau et al.
patent: 6665229 (2003-12-01), Lee et al.

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