Full swing BiCMOS amplifier

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307570, 330262, 330300, H03K 1901

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active

053090420

ABSTRACT:
A BiCMOS amplifier provides full swing with fast transitions from V.sub.dd to V.sub.ss and from V.sub.ss to V.sub.dd, and therefore has important applications in low voltage BiCMOS VLSI circuits. A bipolar totem pole output transistor pair is connected between a supply voltage, V.sub.dd and ground, V.sub.ss. A fast output transition from V.sub.dd to V.sub.ss is accomplished by extending the conduction range of the pull down bipolar transistor. An n-channel MOSFET is fabricated to provide a 0 V.sub.t pass transistor. The pass transistor is coupled to a first of the bipolar output transistor pair, the pull up transistor, to inject carriers into the base of the output transistor and extend the transistor's conduction, such that the transistor provides a fast output upswing from V.sub.ss to V.sub.dd.

REFERENCES:
patent: 4649294 (1987-03-01), McLaughlin
patent: 5138195 (1992-08-01), Satou et al.
patent: 5140190 (1992-08-01), Yoo et al.
K. Yano, M. Hiraki, S. Shukuri, Y. Sawahata, M. Hirao, N. Ohki, T. Nishida, K. Seki, K. Shimohigashi, Quasi-Complementary BiCMOS for Sub-3-V Digital Circuits, 1991 Symposium on VLSI Circuits, The Japan Society of Applied Physics/ The IEEE Solid-State Circuits Council (1991).

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