Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Charge transfer device
Reexamination Certificate
2006-06-27
2010-12-14
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Charge transfer device
C257SE29239, C257SE31084, C250S385100
Reexamination Certificate
active
07851822
ABSTRACT:
A charge-coupled device includes a photosensitive region for collecting charge in response to incident light; a first and third gate electrode made of a transmissive material spanning at least a portion of the photosensitive region; and a second gate electrode made of a transmissive material that is less transmissive than the first and third gates and spans at least a portion of the photosensitive region; wherein the first, second and third gates are arranged symmetrically within an area that spans the photosensitive region.
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XP-002459704—A Large Area 1.3-Megapixel Full Frame CCD Image Sensor with a Lateral-Overflow Drain and a Transparent Gate Electrod, by S.. Kosman, E. G. Stevens, J. C. Cassidy, W.C. Chang, P. Roselle, W.A. Miller, M. Mehra, B.C. Burkey, T.H. Lee, G.A. Haawkins and R.P. Khosla, Eastman Kodak Company, Microelectronics Technoloyg Division, Rochester, NY—11.6.1-11.6.4.
XP-002459705—Two-phase full-frame CCD with double ITO gate structure for Incrased sensistivity, William Des Jardin, Steve Kosman, Neal Kurfiss, James Johnson, David Losee, Gloria Putnam, Anthony Tanbakuchi, Eastman Kodak Company, p. 59.
Coleman W. David
Eastman Kodak Company
Simon Nancy R.
Watkins Peyton C.
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