Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-01-31
2006-01-31
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S078000, C257S079000, C257S013000, C257S076000
Reexamination Certificate
active
06992317
ABSTRACT:
This invention discloses novel device structures for full color flat panel displays utilizing pseudomorphically cladded quantum dot nanocrystals. Different colors are obtained by changing the core size and composition of the quantum dots while maintaining a nearly defect-free lattice at the core-cladding interface. Light emission from the quantum dot core is obtained either by injection or by avalanche electroluminescence. A nanotip emitter device is also presented. These generic devices can be addressed using a variety of conventional display drivers, including active and passive matrix configurations.
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Jain Faquir C.
Papadimitrakopoulos Fotios
Le Thao P.
Lin Patent Agent H. C.
University of Connecticut
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