Fugitive liquid phase densification of silicon nitride

Plastic and nonmetallic article shaping or treating: processes – Utilizing special inert gaseous atmosphere or flushing mold...

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264 65, 264101, 501 97, 501152, C04B 3558

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active

043767427

ABSTRACT:
Dense silicon nitride bodies are fabricated using conventional hot-pressing techniques using cerium oxide as a densification aid. The bodies are then further treated in a flowing inert atmosphere at a temperature of from 1400.degree.-1600.degree. C. for from several hours to 48 hours to remove all or substantially all of the densification aid from grain boundaries. Silicon nitride bodies so treated exhibit superior elevated temperature slow crack growth resistance and strength properties and are suitable for use as structural components in high temperature environments such as jet and internal combustion engines, rockets, atomic power generation, and the like.

REFERENCES:
patent: 3983198 (1976-09-01), Mangels
patent: 3989782 (1976-11-01), Lumby
patent: 4073845 (1978-02-01), Buljan et al.
patent: 4113830 (1978-09-01), Mazdiyasni et al.
patent: 4122140 (1978-10-01), Greskovich et al.
patent: 4134947 (1979-01-01), Oda et al.
patent: 4143107 (1979-03-01), Ishii et al.
patent: 4164528 (1979-08-01), Yajima et al.
patent: 4177230 (1979-12-01), Mazdiyasni
patent: 4179486 (1979-12-01), Lange
patent: 4205033 (1980-05-01), Hattori
patent: 4209478 (1980-06-01), Wooten et al.
patent: 4264548 (1981-04-01), Ezis
patent: 4280973 (1981-07-01), Moskowitz
Mah et al., "The Rule of Cerium Orthosilicate in the Densification of Si.sub.3 N.sub.4 ", Journal of the American Ceramic Society, Jan.-Feb. 1979, pp. 12-16.
Mendiraha, "Slow-Crack Growth from Controlled Surface Flaws in Hot-Pressed Si.sub.3 N.sub.4 ", Journal of Amer. Ceramic Society, May-Jun. 1977, pp. 226-230.
Priest et al., "Sintering of Si.sub.3 N.sub.4 Under High Nitrogen Pressure", Journal of the American Ceramic Society, Jan.-Feb. 1977, p. 81.
Guha et al., "Hot-Pressing and Oxidation Behavior of Silicon Nitride with Ceria Additive", Journal of the American Ceramic Society, Jan.-Feb. 1980, pp. 119-120.

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