Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-02-08
1994-11-15
Ngo, Ngan Van
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257236, 257241, 257250, H01L 2978, H01L 2714, H01L 3100
Patent
active
053650921
ABSTRACT:
A CCD which is designed and processed so that most of each pixel is covered only with an ultra-thin gate electrode so that the CCD can be frontside illuminated and still achieve good sensitivity in the ultra-violet and soft x-ray spectral range. More specifically, in the present invention, the usual three gate structure and corresponding polysilicon layers 1, 2 and 3 of conventional thickness are reduced in width and supplemented by a fourth ultra-thin layer of polysilicon dubbed herein, poly 4, that is deposited over the entire array. This fourth layer, poly 4, makes contact with poly 3, so that when poly 3 is driven, it also drives poly 4, thus allowing charge to collect and transfer as in a normal three phase CCD. However, because the deposition thickness of the poly 4 layer is on the order of 400 Angsttoms, as opposed to conventional thicknesses of 2000 to 5000 Angsttoms, poly 4 is essentially transparent to photons and thereby allows achievement of high quantum efficiency.
REFERENCES:
patent: 5005063 (1991-04-01), Janesick
History and Advancements of Large Area Array Scientific CCD Imagers by James Janesick, Tom Elliott, Astronomical Society of Pacific Conference Series '91, Tucson, Ariz.
California Institute of Technology
Ngo Ngan Van
Tachner Leonard
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