Front-surface emitting diode laser

Coherent light generators – Particular active media – Semiconductor

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372 46, 372 96, 357 4, 357 17, H01S 319

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active

050349589

ABSTRACT:
A front-surface emitting, vertical-cavity laser and its method of making in which a vertical laser cavity with Bragg reflectors and an active layer, preferably formed by a quantum well, is formed on a substrate. Lateral current confinement is achieved by implanting a conductivity-reducing ion into the region surrounding the quantum well. Electrical contact to the upper side of the active layer is achieved by implanting a conductivity-increasing ion into the region surrounding the cavity between the active layer and the upper reflector. By such an electrical contact, the upper reflector can advantageously be composed of dielectric layers. Light is then emitted through the upper reflector.

REFERENCES:
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patent: 4949350 (1990-08-01), Jewell et al.
M. Ogura et al., "Surface-Emitting Laser Diode with Distributed Bragg Reflector and Buried Heterostructure," Electronics Letters, vol. 26, pp. 18-19, Jan. 4, 1990.
P. M. Asbeck et al., "GaAs/(Ga,Al)As Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers," IEEE Electron Device Letters, Aug. 1984, vol. EDL-5, pp. 310-312.
K. Tai et al., "Use of Implant Isolation for Fabrication of Vertical Cavity Surface-Emitting Laser Diodes," Electronics Letters, vol. 25, Nov. 23, 1989, pp. 1644-1645.
K. Iga et al., "Surface Emitting Semiconductor Laser Array: Its Advantage and Future," Journal Vacuum Science Technology, A, vol. 7, May/Jun. 1989, pp. 842-846.
J. L. Jewell et al., "Low-Threshold Electrically Pumped Vertical-Cavity Surface-Emitting Microlasers," Electronics Letters, vol. 25, Aug. 17, 1989, pp. 1123-1124.
M. Orenstein et al., "Vertical Cavity Laser Arrays with Planar Lateral Confinement," Postdeadline Papers, Optical Society of America, 1989 Annual Meeting, Orlando, Fla., Oct. 15-20, 1989, p. 22.

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