Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-05-02
2006-05-02
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S443000, C257S434000, C257S457000, C257S459000, C250S239000, C250S370140, C438S029000
Reexamination Certificate
active
07038288
ABSTRACT:
This invention relates to a novel optoelectronic chip with one or more optoelectronic devices, such as photodiodes, fabricated on a front side of a semiconductor wafer and contacts on a backside of the semiconductor wafer. The backside contacts can be contact bumps, which allow the optoelectronic chip to achieve the benefits of flip chip packaging without flipping the optoelectronic chip upside down with respect to a chip carrier. In an optical communication system, a photodiode chip can be backside bumped to a chip carrier or an electronic chip, allowing front side illumination of the photodiode chip. Front side illumination offers many benefits, including improved fiber alignment, reduced manufacturing time, and overall cost reduction.
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Lai Jay Jie
Vu Truc Q.
Warren Gary B.
Knobbe Martens Olson & Bear LLP
Microsemi Corporation
Wilson Allan R.
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