Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-03-02
2009-02-10
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S233000, C257S458000, C257SE31054
Reexamination Certificate
active
07489014
ABSTRACT:
A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.
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Brogan Conor
Griffin Hugh J.
MacNamara Cormac
Wilson Robin
Coleman W. David
ICEMOS Technology, Ltd.
Panitch Schwarze Belisario & Nadel LLP
Scarlett Shaka
LandOfFree
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