Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Reexamination Certificate
2011-08-16
2011-08-16
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
C257S499000, C257SE21008
Reexamination Certificate
active
07999349
ABSTRACT:
An electronic device is proposed. The device is integrated in a chip including at least one stacked layer having a front surface and a rear surface opposite the front surface, the device including: an insulating trench insulating an active region of the chip, the insulating trench having a section across each plane parallel to the front surface extending along a longitudinal line, and a front-rear contact electrically contacting the front surface to the rear surface in the active region, wherein the section of the insulating trench has a non-uniform width along the longitudinal line, and/or the device further includes at least one further insulating trench within the active region.
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European Search Report for EP 06 11 6133 dated Jan. 8, 2007.
Montanini Pietro
Mottura Marta
Toia Fabrizio Fausto Renzo
Graybeal Jackson
Jablonski Kevin D.
Jorgenson Lisa K.
STMicroelectronics S.r.l.
Tran Tan N
LandOfFree
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