Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-07-18
2011-11-15
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S510000, C438S429000, C438S433000, C438S451000, C257S458000, C257S459000, C257SE21111
Reexamination Certificate
active
08058091
ABSTRACT:
A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.
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Brogan Conor
Griffin Hugh J.
MacNamara Cormac
Wilson Robin
Icemos Technology Ltd.
Nguyen Thinh T
Panitch Schwarze Belisario & Nadel LLP
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