Front-illuminated-type photodiode array

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S443000, C257S461000, C257S184000

Reexamination Certificate

active

11072572

ABSTRACT:
A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorption edge wavelength, λga, equal to or longer than the absorption edge wavelength, λgr, of the absorption layer (λga≧λgr).

REFERENCES:
patent: 6518638 (2003-02-01), Kuhara et al.
patent: 6521968 (2003-02-01), Kuhara et al.
patent: 2004/0038443 (2004-02-01), Jiao
patent: 2005/0199976 (2005-09-01), Iguchi
patent: 63144564 (1988-06-01), None
patent: 04293264 (1992-10-01), None
patent: 2001-144278 (2001-05-01), None
patent: 2001-352094 (2001-12-01), None

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