Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-09-25
2007-09-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S443000, C257S461000, C257S184000
Reexamination Certificate
active
11072572
ABSTRACT:
A front-illuminated-type photodiode array comprises (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode placed at the rear-face side of the semi-conductor substrate, (c) a first-electroconductive-type absorption layer formed at the front-face side of the semiconductor substrate, (d) a plurality of second-electroconductive-type regions formed from the surface of the absorption layer to a certain distance into the absorption layer such that the regions are arranged one- or two-dimensionally, (e) a second-electroconductive-type electrode provided at part of each of the second-electroconductive-type regions, (f) an antireflective coating that covers the top surface other than the individual second-electroconductive-type electrodes and that is for preventing reflection of an incoming lightwave, and (g) at least one leakage-lightwave-absorbing layer that is provided between the first-electroconductive-type electrode and the absorption layer and that has an absorption edge wavelength, λga, equal to or longer than the absorption edge wavelength, λgr, of the absorption layer (λga≧λgr).
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Fish & Richardson P.C.
Jackson Jerome
Sumitomo Electric Industries Ltd.
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