Front contact trenches for polycrystalline photovoltaic devices

Details Front contact trenches for polycrystalline photovoltaic devices Front contact trenches for polycrystalline photovoltaic devices

1995-11-14

2000-07-04

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

257436, 257466, 437 2, 437203, H01L 3106, H01L 3118

Patent

active

060841753

ABSTRACT:
Textured semi-conductor devices, such as macro textured buried-contact solar cells, are produced with special front contact trenches to increase efficiency and decrease costs. In order to produce the front contact trenches, front channels and narrower metallization grooves are cut in the semi-conductor body. The front contact trenches are plated to form attractive conductive buried contacts comprising flush metallization fingers and bus bars.

REFERENCES:
patent: 3163916 (1965-01-01), Gault
patent: 4097986 (1978-07-01), Henry et al.
patent: 4227942 (1980-10-01), Hall
patent: 4355457 (1982-10-01), Barlett et al.
patent: 4726850 (1988-02-01), Wenham et al.
patent: 4748130 (1988-05-01), Wenham et al.
patent: 5024970 (1991-06-01), Mori
patent: 5081049 (1992-01-01), Green et al.
patent: 5100808 (1992-03-01), Glenn
patent: 5131954 (1992-07-01), Vogeli et al.
patent: 5221365 (1993-06-01), Noguchi et al.
patent: 5258077 (1993-11-01), Shahryar
D.R. Bickler, Conference Record, 19th IEEE Photovoltaic Specialists Conf. (1987), pp. 1424-1429.
A. Cuevas et al, Conference Record, 21.sup.st IEEE Photovoltaic Specialists Conf. (1990), pp. 327-331.
T. Nunoi et al, Conference Record, 21.sup.st IEEE Photovoltaic Specialists Conf. (1990), pp. 664-665.
K. Shirasawa et al, Conference Record, 21.sup.st IEEE Photovoltaic Specialists Conf. (1990), pp. 668-673.
C.M. Chong et al, Appl. Phys. Lett., vol. 52, Feb. 1, 1988, pp. 407-409.
J. C. Zolper, S. Narayanan, S. R. Wenham and M.A. Green. 16.7% Efficient, Laser Textured, Buried Contact Polycrystalline Silicon Solar Cell. Appl. Phys Lett 55 (22) Nov. 27, 1989, pp. 2363-2365.
S. Narayanan, J. Zolper, F. Yun, S.R. Wenham, A.B. Sproul, C.M. Chong and M.A. Green. 18% Efficient Polycrystalline Silicon Solar Cells. 21.sup.st IEEE Photovotaic Specialists Conference (1990) pp. 678-680.
J.J. Liou. Detailed Analysis of V-Groove Front Surfaces For Solar Cells., International Journal Of Optoelectronics, 1993. vol. 8, No. 2, pp. 109-122.
M. A. Green. Recent Progress In Crystalline And Polycrystalline Silicon Solar Cells., Solar Energy Materials, vol. 23 pp. 111-116 (1991).
M. A. Green, C.M. Chong, F. Zhang, A. Sproul, J. Zolper and S.R. Wenham. 20% Efficient Laser Grooved, Buried Contact Silicon Solar Cells 20.sup.th IEEE Photovoltaic Specialists Conf, 1988. pp. 411-414.
M.A. Green and S. R. Wenham. High Efficiency Silicon Solar Cells, Present Status. Optoelectronics. vol. 5, No. 2, pp. 135-142, Dec. 1990.
P. Jenkins, G. A. Landis, N. Fatemi, X. Li, D. Scheiman and S. Bailey. Increased Efficiency With Surface Texturing In ITO/InP Solar Cells Apr. 21, 1991, pp. 186-189.
R.S. Wehham, F.Zhang, C.M. Chong and M.A. Green. Advancements In Silicon Buried Contact Solar Cells 21.sup.st IEEE Photovoltaic Specialist Conference, 1990. pp. 323-326.
H. Bender, J. Szlukcik, H. Nussbaumer, G. Palmers, O. Evrard, J. Nijs, R. Mertens, E. Bucher and G. Willeke. Polycrystalline Silicon Solar Cells With A Mechanically Formed Texturization. Appl. Phys. Lett. 62 (23), Jun. 7, 1993. pp. 2941-2943.
T. Nunoi, S. Okamoto, K. Nakajima, S. Tanaka, N. Shibuya, K. Okamoto, T. Nammori, H. Itoh. Cast Polycrystalline Silicon Solar Cell With Grooved Surface., 21.sup.st IEEE Photovoltaic Specialists Conf (1990), pp. 664-665.
M.A. Green, S.R. Wenham, F. Zhang, J. Zhao, A. Wang. Concentrator Silicon Cell Research. Contractor Report SAND91-7016, pp. 27-28.
T. W. Tolpin. Prefront Contract Trench--Structure, Device, Process Sequence For Macro Textured Buried Contact Solar Cells. Amoco Corp.--Naperville, IL--MetroWest. Mar. 4, 1994.

Affiliated with

Also associated with

Rating

Front contact trenches for polycrystalline photovoltaic devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Front contact trenches for polycrystalline photovoltaic devices , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Front contact trenches for polycrystalline photovoltaic devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1488189