Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Plural recrystallized semiconductor layers
Reexamination Certificate
2008-03-04
2010-10-12
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Plural recrystallized semiconductor layers
C257S351000, C257S565000, C257SE27027
Reexamination Certificate
active
07812353
ABSTRACT:
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
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Eriksson Mark A.
Evans Paul G.
Lagally Max G.
Ma Zhenqiang
Wang Guogong
Bell & Manning, LLC
Smoot Stephen W
Wisconsin Alumni Research Foundation
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