Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-01-30
2007-01-30
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S194000, C257S202000
Reexamination Certificate
active
10919568
ABSTRACT:
The present invention provides a device for frequency-selective detection of electromagnetic radiation in the terahertz region of the electromagnetic spectrum using a lateral semiconductor superlattice, a metal antenna attached to the lateral semiconductor superlattice; and a resonator comprising two mirrors and a substrate. A method for detecting electromagnetic radiation using the device is also provided.
REFERENCES:
patent: 5729017 (1998-03-01), Brener et al.
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patent: 5914497 (1999-06-01), Sherwin
patent: 6479822 (2002-11-01), Nelson et al.
E.Schomburg; F. Klappenberger, M. Kratschmer, A.A. Ignatov, K.F.Renk and W. Wegscheider Ultrafas, ultra-broadband superlattice detector for THz radiation Thz conference 2000, Darmstadt, Germany Sep. 28-29, 2000( 2000) 91-93.
S. Winnert “GaAs/ALAs superlattice for detection of terahertz radiation” Microelectronics Journalvol. 31 ( 2000) pp. 389-396.
Cui Hong-Liang
Raspopin Alexander S.
Licata & Tyrrell P.C.
Pham Long
Rao Shrinivas H.
Stevens Institute of Technology
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