Frequency scalable pre-matched transistor

Amplifiers – With semiconductor amplifying device – Including field effect transistor

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330286, H03F 3193

Patent

active

055460496

ABSTRACT:
A relatively high power active gain device, such as MESFET or similar transistor, has distributed impedance characteristics at relatively high RF (microwave) frequencies of operation due to physical device size limitations. A transmission line segment (104) is placed in relatively close spacial relationship and is coupled in parallel electrical relationship with the input port (162) of the high power active device. This provides for highly simplified design of an impedance prematched amplifier (100) over a relatively broad range of predetermined input signal center frequencies. An active device (102) is provided based on power requirements and is characterized over a range of center frequencies and device sizes independently from the characterization of the transmission line segment (104) over a range of center frequencies and segment lengths, since the impedance characteristics of the active device (102) and the transmission line (104) are not dependent upon each other. Based on a predetermined operating center frequency and on the input source impedance characteristics, an appropriate pre-characterized transmission line segment (104) is paired with an appropriate pre-characterized active device (102) based on a simplified model for the prematched amplifier (100). Characterization procedures are therefore simplified and relatively inexpensive. The design cycle for a prematched amplifier is considerably simplified, shortened, and reduced in cost.

REFERENCES:
patent: 4587541 (1986-05-01), Dalman et al.
patent: 5233313 (1993-08-01), Kohno et al.
patent: 5412347 (1995-05-01), Minnis

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