Frequency multiplier with nonlinear semiconductor element

Details Frequency multiplier with nonlinear semiconductor element Frequency multiplier with nonlinear semiconductor element

1974-12-23

1976-06-15

Goldberg, Gerald

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307300, H02M 520

Patent

active

039639770

ABSTRACT:
A semiconductive body in the form of a rectangular parallelepiped is formed of a semiconductive material, such as gallium arsenide or indium phosphide or Group IV elements, having an electric field-to-current characteristic either including a nonlinear region, such as a negative resistance region; or nonlinear and partly including a saturated region. A dc biasing electric field is applied across two opposite faces of the substrate while an ac input electric field is applied across two opposite faces perpendicular to the first faces of the semiconductive body to form a resultant electric field variable in a portion of the characteristic including the nonlinear or saturated region. This variation in the resultant field causes a current component flowing in the direction of the biasing field through the body to have a frequency equal to a multiple of that of the ac input field.

REFERENCES:
patent: 2927221 (1960-03-01), Armstrong
patent: 3093752 (1963-06-01), Christensen
patent: 3808515 (1974-04-01), Davis et al.

Affiliated with

Also associated with

Rating

Frequency multiplier with nonlinear semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Frequency multiplier with nonlinear semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Frequency multiplier with nonlinear semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1697466