Frequency-doubled edge-emitting semiconductor lasers

Details Frequency-doubled edge-emitting semiconductor lasers Frequency-doubled edge-emitting semiconductor lasers

2006-12-21

2008-10-07

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular beam control device

Nonlinear device

C372S021000, C372S043010

Reexamination Certificate

active

07433374

ABSTRACT:
A frequency-doubled, edge-emitting semiconductor laser includes a separate confinement heterostructure surmounted by a waveguide including a converting layer of a periodically poled, optically nonlinear material. Fundamental radiation generated in the heterostructure is directionally coupled from the heterostructure into the waveguide, is converted to second-harmonic radiation in the converting layer and is delivered from the waveguide as output radiation. In one example, a distributed Bragg grating is included at an interface between the heterostructure and the waveguide for facilitating coupling of fundamental radiation from the heterostructure into the waveguide.

REFERENCES:
patent: 5185752 (1993-02-01), Welch et al.
patent: 5384797 (1995-01-01), Welch et al.
patent: 5406575 (1995-04-01), Chelny et al.
patent: 5513204 (1996-04-01), Jayaraman
patent: 5627853 (1997-05-01), Mooradian et al.
patent: 6252896 (2001-06-01), Tan et al.
patent: 6258704 (2001-07-01), Turner
patent: 6339607 (2002-01-01), Jiang et al.
patent: 6424669 (2002-07-01), Jiang et al.
patent: 6434180 (2002-08-01), Cunningham
patent: 6448642 (2002-09-01), Bewley et al.
patent: 6947466 (2005-09-01), Anikitchev et al.
patent: 2001/0043636 (2001-11-01), Bewley et al.
patent: 2002/0001328 (2002-01-01), Albrecht et al.
patent: 2003/0026312 (2003-02-01), Clayton et al.
patent: 2004/0027648 (2004-02-01), Furukawa et al.
patent: 0 322 847 (1988-12-01), None
patent: 62-86881 (1987-04-01), None
patent: 63-213384 (1988-09-01), None
patent: 63-276289 (1988-11-01), None
patent: 4-287389 (1992-10-01), None
patent: 9-307187 (1997-11-01), None
patent: 2005-345949 (2005-12-01), None
patent: WO 00/62384 (2000-10-01), None
patent: WO 01/13481 (2001-02-01), None
patent: WO 01/33678 (2001-05-01), None
patent: WO 01/59895 (2001-08-01), None
patent: WO 01/93386 (2001-12-01), None
patent: WO 02/067393 (2002-08-01), None
patent: WO 02/075879 (2002-09-01), None
patent: WO 2004/077627 (2004-09-01), None
L. Tusufura et al., “Doubled diode offers compact blue source,”Opto and Laser Europe, No. 136, Feb. 2006, pp. 27-29.
M. Maiwald et al., “600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO3bulk crystal,”Optics Letters, vol. 31, No. 6, Mar. 15, 2006, pp. 802-804.
M. Asobe et al., “Laser diode pumped 560-590 nm light source using sum-frequency generation in direct bonded quasi-phase matched LiNbO3waveguide,”Paper CML3, Optical Society of America 2006, CLEO 2006, 3 pages in length.
Book by L.A. Coldren et al.,Diode Lasers and Photonic Integrated Circuits, copyright 1995, Chapters Six (“Perturbation and Coupled-Mode Theory”), Seven (“Dielectric Waveguides”), and Eight (“Photonic Integrated Circuits”), pp. book cover, 10, 263-391.
H.Q.Le et al., “Diode-laser-pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4-W average power,”Appl. Phys. Lett., vol. 63, No. 11, Sep. 13, 1993, pp. 1465-1467.

Affiliated with

Also associated with

Rating

Frequency-doubled edge-emitting semiconductor lasers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Frequency-doubled edge-emitting semiconductor lasers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Frequency-doubled edge-emitting semiconductor lasers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3998328