Frequency divider having the power supply connected to the GaAs

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307443, 307491, 307271, 307310, 3073032, 328 15, 328 25, 257275, 257280, H03K 301, H01L 2948

Patent

active

051631695

ABSTRACT:
A frequency divider circuit including a field effect transistor on a semi-insulating substrate including applying a voltage higher than the lowest of the power supply voltages of the frequency divider circuit to the semi-insulating substrate.

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Das et al., "Low-Frequency . . . MESFETs", Electronics Letters, Mar. 1982, vol. 18, No. 5, pp. 207-208.
Kaminska et al., "Current Oscillations . . . Donor EL2", Appl. Phys. Lett. 41(10), Nov. 1982, pp. 989-991.
Makram-Ebeid et al., "The Roles of . . . Integrated Circuits", IEEE Transactions on Electron Devices, vol. ED-32, No. 3, Mar. 1985, pp. 632-642.
Shimizu et al., "A 1 GHz 50 mW GaAs Dual Modulus Divider IC", IEEE Journal of Solid-State Circuits, Oct. 1984, No. 5.

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