Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1996-07-08
1998-05-12
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257365, 257287, 257401, 257206, H01L 2980
Patent
active
057510334
ABSTRACT:
A frequency converter has low noise figure and high conversion gain characteristics, and can drive directly a 50 Ohm load. In one embodiment, a dual-gate FET is employed that is composed of a first and second FET as the frequency mixing elements, and a third FET is connected in parallel to the first. The gate voltage of the first FET is set to be substantially equal to the pinch-off voltage in order to thereby ensure low noise figure. The second FET is set to a high g.sub.m, from which a frequency-converted signal is outputted. The gate bias of the third FET is set to provide a path for the current flowing through the second FET. As a result, the second FET can be set to a high g.sub.m regardless of the gate voltage of the first FET, in order to ensure high conversion gain.
REFERENCES:
patent: 4112373 (1978-09-01), Miyamoto et al.
patent: 4313126 (1982-01-01), Krumm et al.
patent: 4315272 (1982-02-01), Vorhaus
patent: 4751744 (1988-06-01), Pavio, Jr.
patent: 4845389 (1989-07-01), Pyndiah et al.
patent: 5341111 (1994-08-01), Miya et al.
Hardy David B.
NEC Corporation
Thomas Tom
LandOfFree
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