Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant
Patent
1996-06-27
1998-04-21
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
Deep level dopant
257379, H01L 29167
Patent
active
057420939
ABSTRACT:
A frequency compensator is disposed as a stage preceding an inverter or a source follower constituted by a compound semiconductor FET, and it has a node A, at which an input signal is divided by resistances, and a node B, at which the input signal is divided by capacitances. The two nodes A and B are connected to each other via a diode such that the diode is biased forward when the node A is biased positively with respect to the node B. The node B is connected to the input of the FET. The diode has a barrier height substantially equal to the activation energy in a deep level trap contained in crystal constituting the FET.
REFERENCES:
patent: 5355014 (1994-10-01), Rao et al.
Shun-ichi Fujikawa, High-Performance Pulse Pattern Generator, Multi-Channel Data Generator with GaAs FET Essential for Development of Super-High Speed Digital Devices, JEE, Sep. 1996, pp. 50-54.
Kohei Ono et al., 3G, 5G, and 10Gb/s Ultra-Highspeed Error Rate Measuring Equipment, No. 61, Apr., 1991, pp. 50-61.
NEC Corporation
Prenty Mark V.
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