Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1995-04-25
1996-11-19
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330295, H03F 3193
Patent
active
055766617
ABSTRACT:
An ultra-high frequency semiconductor device according to another aspect of the present invention, includes Field Effect transistor (FET) chips each of which includes FET elements and which are connected to each other by bonding wires, and an internal matching circuit having a concentrated parameter circuit and a distributed parameter circuit, and wherein the concentrated parameter circuit includes capacitor chips provided on input and output sides of the FET chips and including a plurality of chip capacitors each of which is connected to said corresponding FET elements, and wherein each of the chip capacitors has a length predetermined based on a frequency band used in practice. Each of said chip capacitors may have a length predetermined such that a resonance frequency does not exist in a frequency band used in practice or a length predetermined such that an input impedance of each of said chip capacitors is capacitive at an upper limit frequency of the frequency band.
REFERENCES:
patent: 4353047 (1982-10-01), Noguchi et al.
patent: 5132641 (1992-07-01), Khandavalli
Patent Abstracts of Japan, vol. 12, No. 189 (E-616) Dec. 1987.
Patent Abstracts of Japan, vol. 17, No. 657 (E-1470) Aug. 1993.
Mullins James B.
NEC Corporation
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