Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
Patent
1993-07-30
1994-09-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for treating single-crystal
423446, B05D 306
Patent
active
053499220
ABSTRACT:
The bond strength between a diamond and the substrate onto which it is deposited by the chemical vaporization method is decreased to the point where the diamond can be removed from the substrate as a free standing monolithic sheet. The bond strength can be decreased by polishing the substrate, removing corners from the substrate, slow cooling of the substrate after deposition, an intermediate temperature delay in cooling or the application or formation of an intermediate layer between the diamond and the substrate. The free standing sheet of diamond can be used as a laser lens, metallized to form a mirror, or silver soldered to tungsten carbide to form a cutting tool.
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Anthony Thomas R.
Fleischer James F.
Garrett Felisa
General Electric Company
Kunemund Robert
Pittman William H.
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