Frasable electrically programmable read only memory cell using a

Details Frasable electrically programmable read only memory cell using a Frasable electrically programmable read only memory cell using a

1986-06-02

1989-05-30

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

365182, 357235, 357 55, G11C 1134, H01L 2918, H01L 2906

Patent

active

048357413

ABSTRACT:
An electrically programmable read only memory device formed in a face of a semiconductor substrate which includes a floating gate transistor having a floating gate and a control gate formed at least partially in a trench in the substrate.

REFERENCES:
patent: 4209849 (1980-06-01), Schrenk
patent: 4526631 (1985-07-01), Silvestri et al.
patent: 4656607 (1987-04-01), Hagwara et al.
patent: 4668970 (1987-05-01), Yatsuda et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4716548 (1987-12-01), Mochizuki
Y. L. Tsang "Buried-Gate Electrically Alterable Memory Device", vol. 24, No. 3, Aug. 1981, pp. 1331, 1332, 1333.

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