Frame-transfer charge-coupled image sensor device having channel

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357 30, H01L 2978, H01L 2714, H01L 3100

Patent

active

044633670

ABSTRACT:
A charge-coupled image sensor device of the frame-transfer type has an electrode system through which windows (14) allow light to enter the device. One group of electrodes (15 and 16 ) extends transverse to charge transport channels (9 or 11) in the device. Another group of electrodes (18) extends parallel to the channels. Channel bounding regions (12) that electrically separate the channels lie below substantially the entire areas of the windows.

REFERENCES:
patent: 4141024 (1979-02-01), Kano et al.
patent: 4194213 (1980-03-01), Kano et al.
Abe et al., "A CCD Imager with SiO.sub.2 Exposed Photosensor Arrays" IEEE Int. Electron Devices Meeting (12/77), pp. 542-545.
Sequin et al., Charge Transfer Devices, Academic Press, New York, (1975), pp. 12-15, 38, 39, 44-47.
Sequin et al., "Charge-Coupled Area Image Sensor Using Three Levels of Polysilicon" IEEE Trans. Electron Devices, vol. ED-21 (11/74), pp. 712-720.

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