Frame-shuttered CMOS image sensor with simultaneous array...

Details Frame-shuttered CMOS image sensor with simultaneous array... Frame-shuttered CMOS image sensor with simultaneous array...

2007-09-25

2007-09-25

Epps, Georgia (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140RC, C250S214100, C348S030000

Reexamination Certificate

active

10900933

ABSTRACT:
A frame shuttered CMOS image sensor with simultaneous array readout. An array of CMOS pixels are printed on a silicon substrate. Within each pixel is a light sensitive region comprising a photo sensitive diode for converting photons into electrical charge and at least three transistors to permit reading of reset electrical charges and collected electrical charges and for re-setting the photosensitive diode. The sensor includes an array of signal and re-set readout capacitors located on the substrate but outside of the pixel array. Metal conductors printed in said substrate connect each pixel in said pixel array with a signal capacitor and a re-set capacitor in array of signal and re-set readout capacitors. Transistor switches printed in said substrate but outside of said pixel array are used to isolate the signal and re-set capacitors from each other and from the pixels. Control circuitry is provided for re-setting simultaneously each of the pixels in the pixel array, for collecting simultaneously re-set signals from each pixel on to one of the reset capacitors in the array of readout capacitors and for collecting simultaneously integrated pixel signals from each pixel on to one of the signal capacitors in the array of readout capacitors. Readout circuitry is provided for reading charges collected on the array of signal and re-set capacitors.

REFERENCES:
patent: 5614744 (1997-03-01), Merrill
patent: 6753912 (2004-06-01), Wayne
patent: 6803958 (2004-10-01), Wang
patent: 6917027 (2005-07-01), Krymski

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