Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-01-21
1995-06-20
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257232, 257233, 257236, 348250, 348299, 348303, 348304, 348314, 348319, H01L 2978, H01L 2714, H01L 3100
Patent
active
054263174
ABSTRACT:
A frame interline transfer CCD imager is so adapted that signal charges from the photosensor are read into a vertical transfer unit and are transferred at a high transfer rate from the vertical transfer unit to a storage section. The charges from each photosensor are drained during the high transfer rate transfer so that the photosensors are unable to store the signal charges to prevent the occurrence of blooming.
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patent: 4597013 (1986-06-01), Matsumoto
patent: 4672455 (1987-06-01), Miyatake
patent: 4717945 (1988-01-01), Yush et al.
patent: 4748486 (1988-05-01), Miyatake
patent: 4794279 (1988-12-01), Yamamura et al.
patent: 4875100 (1989-10-01), Yonemoto et al.
patent: 4947224 (1990-08-01), Kuroda et al.
Ngo Ngan V.
Shaw, Jr. Philip M.
Sony Corporation
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