Fracturing polygons used in a lithography process for...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S030000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

07022439

ABSTRACT:
A system is provided for fracturing a polygon on a mask layout used in a lithographic process for manufacturing an integrated circuit. The system receives mask layouts that include polygons that may include holes with exit routes near notches either on the outside of the polygon or internal to the hole. A notch is undesirable because fracturing the polygon for printing by the lithographic equipment can create slivers that do not expose well during exposure. The system moves the exit route for a vertex trace so that the exit route passes through a vertex of the notch thereby eliminating the sliver.

REFERENCES:
patent: 5885734 (1999-03-01), Pierrat et al.
patent: 5943487 (1999-08-01), Messerman et al.
patent: 6470489 (2002-10-01), Chang et al.

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