Fractional biasing of semiconductors

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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C327S530000, C327S534000, C257S048000

Reexamination Certificate

active

06943614

ABSTRACT:
A method and system of fractional biasing of semiconductors. A small negative voltage is applied to the back of a semiconductor wafer or device. An operating voltage is applied to the semiconductor. Operating characteristics of the semiconductor are enhanced by application of a fractional bias.

REFERENCES:
patent: 4014779 (1977-03-01), Kuehnle
patent: 4471289 (1984-09-01), Duley et al.
patent: 6048746 (2000-04-01), Burr
patent: 6087892 (2000-07-01), Burr
patent: 6091283 (2000-07-01), Murgula et al.
patent: 6218708 (2001-04-01), Burr
patent: 6303444 (2001-10-01), Burr
patent: 6489224 (2002-12-01), Burr

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