Four-terminal EEPROM cell for storing an analog voltage and memo

Details Four-terminal EEPROM cell for storing an analog voltage and memo Four-terminal EEPROM cell for storing an analog voltage and memo

1999-10-12

2000-11-28

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518514, 365149, G11C 1604

Patent

active

061543926

ABSTRACT:
A non-volatile memory based on a unique EEPROM memory. The non-volatile memory includes a plurality of data memory cells, a data programming circuit, and a first data line. Each data memory cell includes an EEPROM cell having a separate programming electrode and first and second isolation transistors. The programming electrode is coupled to the floating gate by a tunneling window. The first isolation transistor connects the EEPROM cell to the first data line. The second isolation transistor connects the programming electrode to the data programming circuit in response to a write enable signal. The data programming circuit programs a selected data memory cell by receiving a data value to be stored in that data memory cell and generating and coupling a programming signal to the second isolation transistors, the programming signal having a duration that is determined by the received data value. The memory also includes a plurality of first reference memory cells, a first reference programming circuit, and a first reference line, each first reference memory cell is structurally the same as the data memory cells. There is one first reference memory cell corresponding to each data memory cell, and that first reference cell is programmed with a predetermined value each time the corresponding data memory cell is programmed. A data memory cell is read by comparing the conductance of the first data line to the first reference line. The data reading circuit generates an output value that depends on the compared conductances. In embodiments of the invention using multiple reference cells, the various reference cells are programmed with different fixed values each time the corresponding data memory cell is programmed. The values in these reference cells are interpolated during the reading operation to determine the data value stored in the corresponding data memory cell.

REFERENCES:
patent: 4274012 (1981-06-01), Simko
patent: 4486769 (1984-12-01), Simko
patent: 4577215 (1986-03-01), Stewart et al.
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5969991 (1999-10-01), Van Houdt et al.

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