Four-state ROM cell with increased differential between states

Static information storage and retrieval – Read only systems – Semiconductive

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365 45, G11C 1140, G11C 1300

Patent

active

045464537

ABSTRACT:
A four-state ROM cell is improved by providing a tapered potential gate area which allows for the effective gate width to be increased and the gate length to be decreased for each succeedingly higher gain state with a single program mask at the polysilicon gate deposition stage.

REFERENCES:
patent: T979006 (1979-02-01), Hadamard
patent: 3914855 (1985-10-01), Cheney et al.
patent: 4025940 (1977-05-01), Kimura et al.
patent: 4087795 (1978-05-01), Rossler
patent: 4192014 (1980-03-01), Craycraft
patent: 4272830 (1981-06-01), Moench

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