Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1995-08-30
1999-09-21
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257120, 257173, H01L 2974, H01L 31111
Patent
active
059557508
ABSTRACT:
A four-region (PNPN) semiconductor device structure that provides greater flexibility in the setting of PN junction breakdown conditions. The four-region (PNPN) semiconductor device includes an additional N-type body at the junction between the inner N-type region and the inner P-type region, the additional N-type body including a first part adjacent to a second part, the first and second parts having different impurity concentrations from one another, both being of high impurity concentration than the inner N-type region and of lower impurity concentration than the inner P-type region.
Donaldson Richard L.
Fahmy Wael
Kempler William B.
Texas Instruments Incorporated
LandOfFree
Four-region (PNPN) semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Four-region (PNPN) semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Four-region (PNPN) semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-82680