Four quadrant symmetrical semiconductor switch

Details Four quadrant symmetrical semiconductor switch Four quadrant symmetrical semiconductor switch

1974-11-11

1976-07-27

Lynch, Michael J.

357 20, 357 49, 357 55, H01L 29747

Patent

active

039720144

ABSTRACT:
A semiconductor switching device is disclosed which has symmetrical operating characteristics in four quadrants, and which is characterized by the substantial elimination of lateral switching currents. In the preferred embodiments, symmetrical semiconductor switching devices are disclosed having five and seven interleaved layers of opposite semiconductor conductivity types. A lower surface of each device is dissected into two areas by a linear groove extending through the outer semiconductor layers to separate apart and electrically isolate one area from the other, while an upper surface is dissected by a groove separating and electrically isolating opposing regions of opposite conductivity types which are formed in the upper surface and which overlap the projected path of the bottom groove. Electrodes in contact with the opposing regions are connected in parallel to a gate or control terminal, while electrodes in contact with the upper surface and with a region of opposite conductivity type formed into the upper surface are connected in parallel to a first anode terminal. A second anode terminal is formed from electrodes in contact with the two areas of the lower surface.

REFERENCES:
patent: 3123750 (1964-03-01), Hutson et al.
patent: 3280386 (1966-10-01), Philips
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3443171 (1969-05-01), Knott et al.
patent: 3504241 (1970-03-01), Dumanevich et al.
patent: 3622841 (1971-11-01), Zoroblu
patent: 3673468 (1972-06-01), Schafer
patent: 3787719 (1974-01-01), Anderson

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