Four poly EPROM process and structure comprising a conductive so

Details Four poly EPROM process and structure comprising a conductive so Four poly EPROM process and structure comprising a conductive so

1992-09-09

1993-12-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, 437195, 257321, H01L 2170

Patent

active

052702405

ABSTRACT:
A process and structure for an electrically erasable programmable read-only memory is described. The PROM is manufactured with four poly layers, the poly layers forming the floating and control gates, a structure coupling isolated source areas, and the fourth layer forming the digit lines. The inventive structure allows for a self-aligned poly source line which removes the need for an etch of the field oxide which is required in conventional EEPROM designs, which are known to be difficult to control. The poly digit line is also self-aligned and has a large margin of misalignment error in an etch to expose the drain region of the substrate.

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