Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-12-19
1998-03-24
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257246, 257250, H01L 27148, H01L 29768
Patent
active
057316015
ABSTRACT:
According to the present invention, there is provided a solid-state imaging device that has a two-layer transfer electrode structure and is based on a four-phase driving all-pixel reading scheme. The transfer gate electrodes for taking the signal charges out of the photodiode PD and transferring them vertically are formed so that the polysilicon electrodes of a first layer and the polysilicon electrodes of a second layer may each have a specific gate length and be in contact with the gate insulating film on a silicon substrate. If four-phase transfer clocks are .phi.1 to .phi.4, the clocks will be applied to the transfer gate electrodes 31, 32 repeatedly in this order for a single pixel (photodiode PD): the second-layer electrode (.phi.2)--the second-layer electrode (.phi.3)--the first-layer electrode (.phi.4)--the first-layer electrode (.phi.1).
REFERENCES:
patent: 4847692 (1989-07-01), Tabei
patent: 5210433 (1993-05-01), Ohsawa et al.
patent: 5428231 (1995-06-01), Tanaka et al.
patent: 5614741 (1997-03-01), Harada et al.
Shibata Hidenori
Shioyama Yoshiyuki
Kabushiki Kaisha Toshiba
Munson Gene M.
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