Four-layer trapatt diode and method for making same

Details Four-layer trapatt diode and method for making same Four-layer trapatt diode and method for making same

1975-04-30

1977-07-26

Ozaki, G.

Metal treatment

Compositions

Heat treating

148175, 148187, 148 33, H01L 2126

Patent

active

040381064

ABSTRACT:
A method for making a four-layer P+PNN+ or N+NPP+ diode, and the diode, wherein the impurity profile about the PN junction is optimally graded for TRAPATT operation throughout the span of the avalanche region by ion implantation of the impurities to a depth of 1000A in a semiconductor wafer and wherein these impurities are subsequently thermally diffused.

REFERENCES:
patent: 3638300 (1972-02-01), Foxhall et al.
patent: 3660171 (1972-05-01), Tsuchimoto et al.
patent: 3745070 (1973-07-01), Yada et al.
patent: 3758875 (1973-09-01), Hayashi
patent: 3891468 (1975-06-01), Ito et al.
patent: 3926693 (1975-12-01), Kawamoto et al.

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