Four layer semiconductor surge protector having plural short-cir

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...

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257109, 257112, 257173, 361 56, 361 91, 361100, H01L 2974, H01L 31111

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active

054830869

ABSTRACT:
A thyristor type surge protector having a breakdown voltage V.sub.BO approximately equal to a surge clamping voltage V.sub.CL includes a P-type first semiconductor layer, an N-type second semiconductor layer provided in one surface of the first semiconductor layer, a P-type third semiconductor layer provided in the second semiconductor layer so as to provide at least one first exposed region of the second semiconductor layer, and an N-type fourth semiconductor layer formed in the other surface of the first semiconductor layer so as to provide at least one exposed region of said first semiconductor layer, a first electrode provided over the third semiconductor layer and of the first exposed region, and a second electrode provided over the fourth semiconductor layer and second exposed region.

REFERENCES:
patent: 2971139 (1961-02-01), Noyu
patent: 4282555 (1981-08-01), Svedberg
patent: 4644437 (1987-02-01), Robe
patent: 4905119 (1990-02-01), Webb
patent: 4967256 (1990-10-01), Pathak et al.
patent: 5352905 (1994-10-01), Ohta

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