Forward body bias-controlled semiconductor integrated circuit

Details Forward body bias-controlled semiconductor integrated circuit Forward body bias-controlled semiconductor integrated circuit

2007-06-21

2011-10-11

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular power supply distribution means

C257S203000, C257SE27063, C327S534000, C365S154000

Reexamination Certificate

active

08035134

ABSTRACT:
In a first functional block, a source voltage input terminal of a PMOS transistor and a substrate voltage input terminal of an NMOS transistor are connected to their voltage supply terminals, respectively. The substrate voltage input terminal of the PMOS transistor in the ith(1≦i≦n−1) functional block and the source voltage input terminal of the NMOS transistor therein are connected bijectively with the source voltage input terminal of the PMOS transistor in the i+1thfunctional block and the substrate voltage input terminal of the NMOS transistor therein. In the nthfunctional block, the substrate voltage input terminal of the PMOS transistor and the source voltage input terminal of the NMOS transistor are connected to their voltage supply terminals, respectively.

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Chinese Office Action, with English Translation, issued in Chinese Patent Application No. 2007101094608, dated Feb. 12, 2010.

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