Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...
Reexamination Certificate
1999-08-20
2001-04-03
Ogden, Necholus (Department: 1751)
Cleaning compositions for solid surfaces, auxiliary compositions
Cleaning compositions or processes of preparing
For cleaning a specific substrate or removing a specific...
C134S001100, C134S001000, C134S001200, C134S001300, C134S002000
Reexamination Certificate
active
06211126
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to chemical formulations used in semiconductor wafer fabrication and particularly to chemical formulations that are utilized to remove residue from wafers following a resist plasma ashing step.
2. Description of the Prior Art
The prior art teaches the utilization of various chemical formulations to remove residue and clean wafers following a resist ashing step. Some of these prior art chemical formulations include akaline compositions containing amines and/or tetraalkyl ammonium hydroxides, water and/or other solvents, and chelating agents. The various prior art formulations have drawbacks which include unwanted removal of metal or insulator layers and the corrosion of desirable metal layers, particularly aluminum and aluminum-copper alloys and titanium nitride features. There is therefore a need for chemical formulations which effectively remove residue following a resist ashing step which do not attack and potentially degrade delicate structures which are meant to remain on a wafer.
SUMMARY OF THE INVENTION
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
An organic amine
2-98%
Water
0-50%
A 1,3-dicarbonyl compound chelating agent
0.1-60%
A second or alternative chelating agent
0-25%
A polar organic solvent
2-98%
It is an advantage of the present invention that it effectively removes inorganic residues following a plasma ashing step.
It is another advantage of the present invention that it effectively removes metal halide and metal oxide residues following plasma ashing.
These and other features and advantages of the present invention will become understood to those of ordinary skill in the art upon review of the following detailed description of the preferred embodiments.
REFERENCES:
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5840127 (1998-11-01), Hayashida et al.
patent: 5885362 (1999-03-01), Morinaga et al.
patent: 6030491 (2000-02-01), Vaartstra
patent: 0701274A1 (1996-03-01), None
patent: WO9822568 (1998-05-01), None
patent: WO9828395 (1998-07-01), None
patent: WO60/034144 (1996-12-01), None
Fine Stephen A.
Guan George
Wojtczak William A.
Advanced Technology & Materials Inc.
Guillot Robert O.
Ogden Necholus
Webb Gregory E.
Zitzmann Oliver A. M.
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