Forming trench in semiconductor substrate with rounded corners

Details Forming trench in semiconductor substrate with rounded corners Forming trench in semiconductor substrate with rounded corners

1989-03-22

1990-05-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, H01L 21265, H01L 2176

Patent

active

049238213

ABSTRACT:
After a semiconductor substrate is etched so as to form a groove and an impurity is introduced to the semiconductor substrate and to the groove, the corner portions of the groove are rounded by thermal oxidation of the semiconductor substrate, thereby forming a thermal oxide film on the corner portions, and an insulator is embedded in the groove, thereby forming an element isolating region.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 4200968 (1980-05-01), Schroeder
patent: 4645564 (1987-02-01), Morie et al.
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4693781 (1987-09-01), Leung et al.
patent: 4735824 (1988-04-01), Yamabe et al.
"A Variable-Size Shallow Trench Isolation (STI) Technology with Diffused Sidewall Doping for Submicron CMOS", IEEE Publication-IEDM 88, pp. 92-95, (1988).

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