Forming tapered lower electrode phase-change memories

Details Forming tapered lower electrode phase-change memories Forming tapered lower electrode phase-change memories

2005-04-11

2008-09-09

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S095000, C257SE45002

Reexamination Certificate

active

07422917

ABSTRACT:
A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions, and isotropic etching may be used to taper the electrode as well as part of the underlying doped regions.

REFERENCES:
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 5199917 (1993-04-01), MacDonald et al.
patent: 6031322 (2000-02-01), Takemura et al.
patent: 6150253 (2000-11-01), Doan et al.

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