Forming tapered lower electrode phase-change memories

Details Forming tapered lower electrode phase-change memories Forming tapered lower electrode phase-change memories

2005-08-23

2005-08-23

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

Reexamination Certificate

active

06933516

ABSTRACT:
A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions, and isotropic etching may be used to taper the electrode as well as part of the underlying doped regions.

REFERENCES:
patent: 4085498 (1978-04-01), Rideout
patent: 4474623 (1984-10-01), Adlerstein
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 6014400 (2000-01-01), Kobayashi
patent: 6150253 (2000-11-01), Doan et al.
patent: 6407004 (2002-06-01), Kimura et al.

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