Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2007-10-29
2010-11-09
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
C216S067000, C438S706000
Reexamination Certificate
active
07828986
ABSTRACT:
A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.
REFERENCES:
patent: 5290397 (1994-03-01), Ober et al.
patent: 6518194 (2003-02-01), Winningham et al.
patent: 6720061 (2004-04-01), Port et al.
patent: 6893705 (2005-05-01), Thomas et al.
patent: 7037744 (2006-05-01), Colburn et al.
patent: 7090784 (2006-08-01), Asakawa et al.
patent: 2004/0087176 (2004-05-01), Colburn et al.
patent: 2004/0127001 (2004-07-01), Colburn et al.
patent: 2005/0079719 (2005-04-01), Colburn et al.
patent: 2005/0124172 (2005-06-01), Townsend III et al.
patent: 2009/0170342 (2009-07-01), Kim et al.
Sung Ho Han; Advanced A1 Damascene Process for Fine Trench under 70nm Design Rule; Mater. Res. Soc. Symp. Proc. vol. 863 © 2005 Materials Research Society; pp. B8.23.1-B8.23.6.
Freer et al.; Oriented Mesoporous Organosilicate Thin Films; © 2005 American Chemical Society; Nano Letters 2005, vol. 5, No. 10; pp. 2014-2018.
Noguchi et al.; Simple Self-Aligned Air-Gap Interconnect Process with Cu/FSG Structure; 3 pages.
Gosset et al.; General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material; 3 pages.
Uno et al.; Dual Damascene Process for Air-Gap Cu Interconnects Using Conventional CVD Films as Sacrificial Layers; 3 pages.
J.P. Gueneau De Mussy et al., Novel Selective Sidewall Airgap Process; 3 pages.
Daamen et al.; Air Gap Integration for the 45 nm Node and Beyond; 3 pages.
Cheng Joy
Hart Mark W.
Ito Hiroshi
Kim Ho-Cheol
Miller Robert
International Business Machines - Corporation
Lin Patti
Schmeiser Olsen & Watts
Tran Binh X
LandOfFree
Forming surface features using self-assembling masks does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Forming surface features using self-assembling masks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming surface features using self-assembling masks will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4223707