Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-03-28
2006-03-28
Tran, Thien F. (Department: 2811)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S459000, C438S752000
Reexamination Certificate
active
07018909
ABSTRACT:
The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.
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Arene Emmanuel
Ghyselen Bruno
Mazure Carlos
S.O.I.Tec Silicon on Insulator Technologies S.A.
Tran Thien F.
Winston & Strawn LLP
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