Forming structures that include a relaxed or pseudo-relaxed...

Details Forming structures that include a relaxed or pseudo-relaxed... Forming structures that include a relaxed or pseudo-relaxed...

2011-04-05

2011-04-05

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C257SE21090

Reexamination Certificate

active

07919393

ABSTRACT:
A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

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